hexfet ? power mosfet pd- 93766 this new series of low charge hexfet ? power mosfets achieve significant lower gate charge over conventional mosfets. utilizing the new lcdmos (low charge device mosfets) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings. in addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications. frequencies of a few mhz at high current are possible using the new low charge mosfets. these device improvements combined with the proven ruggedness and reliability that characterize of hexfet power mosfets offer the designer a new power transistor standard for switching applications. s d g v dss = 500v r ds(on) = 0.85 w i d = 8.0a l ultra low gate charge l reduced gate drive requirement l enhanced 30v v gs rating l reduced c iss , c oss , c rss l extremely high frequency operation l repetitive avalanche rated description 1/3/2000 parameter typ. max. units r q jc junction-to-case CCC 1.0 r q ja junction-to-ambient (pcb mounted,steady-state)** CCC 40 thermal resistance c/w parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v ? 8.0 i d @ t c = 100c continuous drain current, v gs @ 10v ? 5.1 a i dm pulsed drain current ?? 28 p d @t a = 25c power dissipation 3.1 w p d @t c = 25c power dissipation 125 w linear derating factor 1.0 w/c v gs gate-to-source voltage 30 v e as single pulse avalanche energy? ? 510 mj i ar avalanche current ? 8.0 a e ar repetitive avalanche energy ? 13 mj dv/dt peak diode recovery dv/dt ?? 3.5 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case) c absolute maximum ratings www.irf.com 1 irf840lcs IRF840LCL d 2 pak irf840lcs to-262 IRF840LCL
irf840lcs/lcl 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ?? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 2.0 v t j = 25c, i s = 8.0a, v gs = 0v ? t rr reverse recovery time CCC 490 740 ns t j = 25c, i f = 8.0a q rr reverse recovery charge CCC 3.0 4.5 c di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) ? starting t j = 25c, l = 14mh r g = 25 w , i as = 8.0a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) notes: ? i sd 8.0a, di/dt 100a/s, v dd v (br)dss , t j 150c ? pulse width 300s; duty cycle 2%. ? uses irf840lc data and test conditions ** when mounted on 1" square pcb (fr-4 or g-10 material). for recommended soldering techniques refer to application note #an-994. s d g source-drain ratings and characteristics 8.0 28 a parameter min. typ. max. u nits conditions v (br)dss drain-to-source breakdown voltage 500 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.63 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.85 w v gs = 10v, i d = 4.8a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 4.0 CCC CCC s v ds = 50v, i d = 4.8a ? CCC CCC 25 a v ds = 500v, v gs = 0v CCC CCC 250 v ds = 400v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 39 i d = 8.0a q gs gate-to-source charge CCC CCC 10 nc v ds = 400v q gd gate-to-drain ("miller") charge CCC CCC 19 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 12 CCC v dd = 250v t r rise time CCC 25 CCC i d = 8.0a t d(off) turn-off delay time CCC 27 CCC r g = 9.1 w t f fall time CCC 19 CCC r d = 30 w , see fig. 10 ?? between lead, CCC CCC and center of die contact c iss input capacitance CCC 1100 CCC v gs = 0v c oss output capacitance CCC 170 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 18 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) i gss ns i dss drain-to-source leakage current nh 7.5 l s internal source inductance
irf840lcs/lcl www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics
irf840lcs/lcl 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage
irf840lcs/lcl www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature
irf840lcs/lcl 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v
irf840lcs/lcl www.irf.com 7 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irf840lcs/lcl 8 www.irf.com d 2 pak package outline d 2 pak part marking information 10.16 (.400) re f. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - ga te 2 - d r ain 3 - s ou rc e 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
irf840lcs/lcl www.irf.com 9 to-262 package outline to-262 part marking information
irf840lcs/lcl 10 www.irf.com d 2 pak tape & reel information 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.42 9) 10.70 (.42 1) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.06 3) 1.50 (.05 9) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min . 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 1/2000
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